TG2006F 2002-07-31 1 toshiba gaas linear integrated circuit gaas monolithic TG2006F 1.9 ghz band power amplifier phs, digital cordless telecommunication features positive voltage operation: v d = 3 v, v g = 0 or 1 v low current consumption: it = 130 ma (typ.) small package: sm8 package (2.9 2.8 1.1mm) low cost: can be achieved minimum function. pin assignment (top view) marking maximum ratings (ta = 25 c) characteristic symbol rating unit v dd1 5 v supply voltage v dd2 5 v gate voltage v gg 1 v input power p i 10 mw power dissipation p d (note1) 250 mw operating temperature range t opr ? 40~85 c storage temperature range t stg ? 55~150 c note 1: when mounted on 2.5 cm 2 1.6 t glass epoxy board. weight: 0.02 g (typ.)
TG2006F 2002-07-31 2 classify rank this device is classified by fig.1. and satisfy electrical characteristics by v g condition on each rank. the rank division is performed for every reel and can't order to choose any rank. table 1 rank v g condition a v g = 0 v b v g = 1 v caution this device is electrostatic sensitivity. please handle with caution. electrical characteristics (v d = 3 v, v g = (note2), f = 1.9 ghz, ta = 25c, z g = z i = 50 ? , 1/2 duty operation) (note 4) characteristics symbol test circuit test condition min typ. max unit frequency f range D D 1895 D 1918 mhz total current it 1 D 130 150 gate current ig 1 p o = 21dbmw, p i = regulation D D 1 ma output power p o 1 p i = 1dbmw 21 D D dbmw small signal gain g p 1 p i = ? 20dbmw 21 23 D db acp (1) 1 ? f = 600 khz D ? 60 ? 55 adjacent channel leakage power ratio acp (2) 1 p o = 21dbmw, p i = regulation (note 3) ? f = 900 khz D ? 65 ? 60 db 2f 0 1 D D ? 30 harmonics 3f 0 1 p o = 21dbmw, p i = regulation D D ? 30 db input vswr vswr in 1 p o = 21dbmw, p i = regulation D 1.5 2.5 D load mismatch D D v d = 4.0v, v g = (note 2), p o = 21dbmw, p i = regulation, z g = 50 ? , vswr load = 20 : 1 all phase no degradation D stability D D v d = 2.7~4.0v, v g = (note 2), p i = ? 2dbmw~4dbmw, z g = 50 ? vswr load = 6: 1 all phase all spurious output than 60db below desired signal D note 2: v g voltage is decided on fig.1. note 3: input signal is modulated to /4qpsk ( = 0.5). bit rate is 384 kbps. note 4: v d = v d1 = v d2 , it = id1 + id2
TG2006F 2002-07-31 3 test circuit 1 (rf test circuit) notice the circuits and measurements contained in this document are given only in the context of as examples of applications for these products. moreover, these example application circuits are not intended for mass production, since the high-frequency characteristics (the ac characteristics) of these devices will be affected by the external components which the customer uses, by the design of the circuit and by various other conditions. it is the responsibility of the customer to design external circuits which correctly implement the intended application, and to check the characteristics of the design. toshiba assume no responsibility for the integrity of customer circuit designs or applications.
TG2006F 2002-07-31 4 rf test board
TG2006F 2002-07-31 5
TG2006F 2002-07-31 6 package dimensions
TG2006F 2002-07-31 7 toshiba is continually working to improve the quality and reliability of its products. nevertheless, semiconductor devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress. it is the responsibility of the buyer, when utilizing toshiba products, to comply with the standards of safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of such toshiba products could cause loss of human life, bodily injury or damage to property. in developing your designs, please ensure that toshiba products are used within specified operating ranges as set forth in the most recent toshiba products specifications. also, please keep in mind the precautions and conditions set forth in the ?handling guide for semiconductor devices,? or ?toshiba semiconductor reliability handbook? etc.. the toshiba products listed in this document are intended for usage in general electronics applications (computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances, etc.). these toshiba products are neither intended nor warranted for usage in equipment that requires extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or bodily injury (?unintended usage?). unintended usage include atomic energy control instruments, airplane or spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments, medical instruments, all types of safety devices, etc.. unintended usage of toshiba products listed in this document shall be made at the customer?s own risk. gallium arsenide (gaas) is a substance used in the products described in this document. gaas dust or vapor is harmful to the human body. do not break , cut, crush or dissolve chemically. the information contained herein is presented only as a guide for the applications of our products. no responsibility is assumed by toshiba corporation for any infringements of intellectual property or other rights of the third parties which may result from its use. no license is granted by implication or otherwise under any intellectual property or other rights of toshiba corporation or others. the information contained herein is subject to change without notice. 020704eac restrictions on product use
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